img Leseprobe Leseprobe

Advanced High Voltage Power Device Concepts

B. Jayant Baliga

PDF
ca. 213,99 €
Amazon iTunes Thalia.de Weltbild.de Hugendubel Bücher.de ebook.de kobo Osiander Google Books Barnes&Noble bol.com Legimi yourbook.shop Kulturkaufhaus ebooks-center.de
* Affiliatelinks/Werbelinks
Hinweis: Affiliatelinks/Werbelinks
Links auf reinlesen.de sind sogenannte Affiliate-Links. Wenn du auf so einen Affiliate-Link klickst und über diesen Link einkaufst, bekommt reinlesen.de von dem betreffenden Online-Shop oder Anbieter eine Provision. Für dich verändert sich der Preis nicht.

Springer New York img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Elektronik, Elektrotechnik, Nachrichtentechnik

Beschreibung

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Weitere Titel von diesem Autor
Cover IGBT Device
IGBT Device
B. Jayant Baliga
186,30 €
Cover IGBT Device
IGBT Device
B. Jayant Baliga
130,26 €
Weitere Titel in dieser Kategorie

Kundenbewertungen

Schlagwörter

SiC Devices, Semiconductors, Emitter Switched Thyristor, Insulated Gate Bipolar Transistors, MOS-Controlled Thyristors