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Noise in Nanoscale Semiconductor Devices

Tibor Grasser (Hrsg.)

PDF
ca. 106,99
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Springer International Publishing img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Elektronik, Elektrotechnik, Nachrichtentechnik

Beschreibung

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices.  Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models.  Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.

  • Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;
  • Enables readers to design more reliable semiconductor devices;
  • Offers the most up-to-date information on point defects, based on physical microscopic models.

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Schlagwörter

Low-Frequency Noise in Advanced MOS Devices, Noise Analysis, Noise in Semiconductor Devices, Noise Simulation, Random Telegraph Signals in Semiconductor Devices