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Emerging Resistive Switching Memories

Jianyong Ouyang

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Springer International Publishing img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Maschinenbau, Fertigungstechnik

Beschreibung

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

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Schlagwörter

Memory device nanoparticles, Fabrication of novel non-vole. rest. random-access mem., Neuromorphic memories, Memristor devices, RRAM, Resistive switching, Nonvolatile memories, Bistable devices, Charge trapping, Transition metal oxide