img Leseprobe Leseprobe

Multi-run Memory Tests for Pattern Sensitive Faults

Ireneusz Mrozek

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Springer International Publishing img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Elektronik, Elektrotechnik, Nachrichtentechnik

Beschreibung

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.

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Schlagwörter

memory diagnostics, software testing, test methods and hardware design, RAM testing, multi-run memory testing