III-Nitride LEDs

From UV to Green

Sheng Liu, Shengjun Zhou

PDF
ca. 117,69
Amazon iTunes Thalia.de Weltbild.de Hugendubel Bücher.de ebook.de kobo Osiander Google Books Barnes&Noble bol.com Legimi yourbook.shop Kulturkaufhaus ebooks-center.de
* Affiliatelinks/Werbelinks
Hinweis: Affiliatelinks/Werbelinks
Links auf reinlesen.de sind sogenannte Affiliate-Links. Wenn du auf so einen Affiliate-Link klickst und über diesen Link einkaufst, bekommt reinlesen.de von dem betreffenden Online-Shop oder Anbieter eine Provision. Für dich verändert sich der Preis nicht.

Springer Nature Singapore img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Elektrizität, Magnetismus, Optik

Beschreibung

This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Weitere Titel in dieser Kategorie
Cover Collected Writings of Nikola Tesla
Thomas Commerford Martin
Cover Collected Writings of Nikola Tesla
Thomas Commerford Martin

Kundenbewertungen

Schlagwörter

Patterned sapphire substrate, Flip-chip LEDs, External quantum efficiency, High-voltage LEDs, Epitaxial growth, Ohmic contact, Micro-LED, Current blocking layer, Light extraction efficiency, Threading dislocations, Vertical LEDs, Mini-LED, Reflective electrode, Internal quantum efficiency, Device reliability, Current crowding, Nucleation layer, Current spreading layer, III-Nitride semiconductors