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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Viranjay M. Srivastava, Ghanshyam Singh

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Springer International Publishing img Link Publisher

Naturwissenschaften, Medizin, Informatik, Technik / Elektronik, Elektrotechnik, Nachrichtentechnik

Beschreibung

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

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Schlagwörter

Analog/RF IC Design, Double-Gate MOSFET, CSDG MOSFET, CMOS Radio-Frequency Integrated Circuits, DP4T RF Switch, HFO2 Based Double-Gate MOSFET, Double-Pole Four-Throw RF Switch